RC50N03D5 N-Channel Enhancement Mode Field Effect Transistor
●V-DS: 30V
●I-D: 50A
●R-DS(ON)( at V-GS=10V): <8 . 5mohm
●R-DS(ON)( at V-GS=4.5V): <1 3mohm
■General Description:
●Trench Power LV MOSFET technology
●Excellent package for heat dissipation
●High density cell design for low R-DS(ON)
Datasheet |
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Please see the document for details |
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PDFN5X6 |
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English Chinese Chinese and English Japanese |
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2022/4/1 |
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901 KB |
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