G1003B N-Channel Enhancement Mode Power MOSFET
■The G1003B uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
●General Features
■VDS: 100V
■ID (at VGS = 10V): 3A
■RDS(ON) (at VGS = 10V): < 130mΩ
■RDS(ON) (at VGS = 4.5V): < 145mΩ
■100% Avalanche Tested
■RoHS Compliant
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[ Power switch ][ DC/DC converters ] |
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Datasheet |
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Please see the document for details |
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SOT-23-3 |
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English Chinese Chinese and English Japanese |
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2022/5/30 |
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1 MB |
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