MPVU7N65 Power MOSFET
■Drain-Source breakdown voltage: BVDSS=650V (Min.)
■ Low gate charge: Qg=20nC (Typ.)
■Low drain-source On resistance: RDS(on)=1.35Ω (Max.)
■100% avalanche tested
■RoHS compliant device
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Datasheet |
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Please see the document for details |
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TO-251 |
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English Chinese Chinese and English Japanese |
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2016/12/14 |
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Ver1.0 |
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1.1 MB |
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