FL3409 P-Channel Enhancement Mode MOSFET
●-30V/-3A,RDS(ON)=100mΩ(typ.)@VGS=-10V
◆RDS(ON)=140mΩ(typ.)@VGS=-4.5V
●Super High Dense Cell Design for Extremely
◆Low RDS(ON)
●Reliable and Rugged
●SOT-23 Package
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[ Power Management in Notebook Computer ][ Portable Equipment ][ Battery Powered Systems. ] |
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Datasheet |
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Please see the document for details |
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SOT-23 |
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English Chinese Chinese and English Japanese |
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2010/6/21 |
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1.3 MB |
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