PBSS5350T 50 V, 3 A PNP low VCEsat transistor

2022-07-28
●PNP low VCEsat transistor in in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
●NPN complement: PBSS4350T
●Features and benefits:
■Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat
■High collector current capability
■High collector current gain
■Improved efficiency due to reduced heat generation
■AEC-Q101 qualified

Nexperia

PBSS5350T

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Part#

PNP low VCEsat transistor

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Power management applications ]Low and medium power DC/DC convertors ]Supply line switching ]Battery chargers ]Linear voltage regulation with low voltage drop-out (LDO) ]

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Datasheet

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Please see the document for details

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SOT23;TO-236AB;SMD

English Chinese Chinese and English Japanese

10 May 2022

v.3

PBSS5350T v.3

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