SLP20N60S/SLF20N60S 600V N-Channel MOSFET
■This Power MOSFET is produced using Maple semi's advanced planar stripe DMOS technology.
■This advanced technology has been especially tailored to minimize on-state resistance , provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
■These devices are well suited for AC/DC power conversion in switching mode operation for higher efficiency.
●Features:
■20A, 600V, RDS (on) = 0.19Ω @ VGS = 10V
■Low gate charge (typical 27nc)
■Low Crss (typical 27pF)
■High ruggedness
■Fast switching
■100% avalanche tested
■Improved dv / dt capability
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Datasheet |
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Please see the document for details |
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TO-220;TO-220F |
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English Chinese Chinese and English Japanese |
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March. 2013 |
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Rev. 00 |
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470 KB |
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