MX6018 N-Channel Enhancement Mode Power MOSFET
■The MX6018 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
●General Features
■VDS=60V,ID=18A
■RDS(ON)(Typ.)10mΩ @ Vgs=10V
■RDS(ON(Typ.)13.5mΩ @ Vgs=4.5V
■High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Special process technology for high ESD capability Good stability and uniformity with high EAS Excellent package for good heat dissipation
[ Hard Switched and High Frequency Circuits ][ Uninterruptible Power Supply ] |
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Datasheet |
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Please see the document for details |
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SOP-8 |
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English Chinese Chinese and English Japanese |
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2021/12/8 |
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1.9 MB |
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