IRF1404ZPbF AUTOMOTIVE MOSFET

2022-07-21
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

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IRF1404ZPbFIRF1404ZSPbFIRF1404ZLPbF

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AUTOMOTIVE MOSFETPower MOSFET

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Automotive ]

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Datasheet

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TO-220AB;D²PAK;TO-262

English Chinese Chinese and English Japanese

2006/11/6

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