2SK1118 Discrete Semiconductors

2022-07-14
●4-V gate drive
●Low Drain−Source ON Resistance :
■R-DS (ON) = 0.95 mΩ (typ.)
● High forward transfer admittance :
■|Yfs| = 4.0S (typ.)
● Low leakage current :
■I-DSS = 300 μA (max) (V-DS = 600 V)
● Enhancement mode :
■V-th = 1.5~3.5V@V-DS = 10 V, I-D = 1 mA)

YiXin

2SK1118

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Discrete Semiconductors

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Datasheet

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SC-67

English Chinese Chinese and English Japanese

2014/1/3

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