VDRF256M16XS54XX4V90 VDIC NOR FLASH MEMORY USER MANUAL

2022-07-12
●The VDRF256M16XS54XX4V90is a 256Mbit high-density simultaneous Read/Write FLASH Memory module organized as 4 × 4M ×16bit.
Using high-performance and high–reliability technology chips, stacking with the well-known ORBITA Proprietary technology, this FLASH memory module provides a cost-effective solution for low power and high-capacity non-volatile memory data storage needs.
Each device of the module is a 64Mbit FLASH Memory, organized 4M x 16bit that can be accessed by activating the associated control signals(#CE x and #WP/ACC x),and electrically erasable, read/write non-volatile flash memory. Any word can be programmed typically in 8μs. The device features 3.3V voltage read and write operation, with access times as fast as 90ns to eliminate the need for WAIT states in high-performance microprocessor systems. This device is designed to allow either single Sector or full Chip erase operation, where each Sector can be individually protected against program/erase operations or temporarily unprotected to erase or program. The device can sustain a minimum of 1 million program/erase cycles on each Sector. The VDRF256M16XS54XX4V90 module is packaged in a 54 sop package and is available for commercial, industrial and military temperature range.
●Features:
■Single power supply operation
▲Full voltage range: 2.7 to 3.6 volts read and write operations
■High performance
▲Access times as fast as 90 ns
■Low power consumption (typical values at 5MHz)
▲9 mA typical active read current
▲20 mA typical program/erase current
▲Less than 4 μA current in standby or automatic sleep mode
■Flexible Sector Architecture:
▲Eight 8-Kbyte sectors, One hundred and twenty-seven 32K-Word / 64K-byte sectors
▲8-Kbyte sectors for Top or Bottom boot
▲Sector/Sector Group protection: Hardware locking of sectors to prevent program or erase operations within individual sectors. Additionally, temporary Sector Group Unprotect allows code changes in previously locked sectors
■High performance program/erase speed
▲Word program time: 8μs typical
▲Sector erase time: 500ms typical
▲Chip erase time: 64s typical
■JEDEC Standard compatible
■Standard DATA# polling and toggle bits feature
■Unlock Bypass Program command supported
■Erase Suspend / Resume modes:
▲Read and program another Sector during Erase Suspend Mode
■Support JEDEC Common Flash Interface(CFI)
■Low Vcc write inhibit < 2.5V
■Minimum 100K program/erase endurance cycles
■#RESET hardware reset pin
▲Hardware method to reset the device to read mode
■ #WP/ACC input pin
▲Write Protect (#WP) function allows protection of outermost two boot sectors, regardless of sector protect status
▲ Acceleration (ACC) function provides accelerated program times
■Package Options
▲54-pin SOP
■Commercial and Industrial Temperature Range

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VDIC NOR FLASH MEMORY

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User's Guide

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SOP54

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April 22, 2021

Version: B2

ORBITA/SIP-VDRF256M16XS54XX4V90-USM-01

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