VDMR16M08XS44XX1V35 VDIC MAGNETORESISTIVES RANDOM ACCESS MEMORY USER MANUAL
The VDMR16M08XS44XX1V35 offers SRAM compatible 35ns read/write timing with unlimited endurance.Data is always non-volatile for greater than 20-years.Data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification. The VDMR16M08XS44XX1V35 is the ideal memory solution for applications that must permanently store and retrieve critical data and programs quickly.
The VDMR16M08XS44XX1V35 has one die. It can be selected with dedicated #E. Low interconnect parasitic capacitance of the stacking technology, by reducing the connection length, allows this MRAM module to be useful for a variety of high bandwidth, high performance and high density memory system applications.
●Features:
■Fast 35ns Read/Write Cycle
■SRAM Compatible Timing, Uses Existing SRAM Controllers Without Redesign
■Unlimited Read & Write Endurance
■Data Always Non-volatile for >20-years
■One Memory Replaces Flash, SRAM, EEPROM and BBSRAM in a system for simpler, more efficient design
■Stack of one16Mbit MRAM
■Organized as 1 die of 2M x 8 bit memory
■One independent Ship Select
■3.3 Volt Power Supply
■Automatic Data Protection on Power Loss
■44-lead SOP package
VDMR16M08XS44XX1V35 、 VDMR16M08XS44XX1V35□ 、 VDMR16M08VS44EE1V35 、 VDMR16M08VS44IB1V35 、 VDMR16M08RS44SS1V35 |
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User's Guide |
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Please see the document for details |
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SOP44 |
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English Chinese Chinese and English Japanese |
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Mar 21,2020 |
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Version:A2 |
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ORBITA/SIP-VDMR16M08XS44XX1V35 -USM-01 |
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181 KB |
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