VDMR10M40XS96XX5V35 VDIC MAGNETORESISTIVES RANDOM ACCESS MEMORY USER MANUAL

2022-07-12
●The Magnetoresistive Random Access Memory (MRAM) stores data using magnetic polarization rather than electric charge. The MRAM acts like a Flash (programmable) and like a SRAM (rapid data buffers). The VDMR10M40XS96XX5V35 is a high-speed highly integrated Static Random Access Memory containing 256K × 40bits, organized with two banks of 5Mbit. Each bank has a 40-bit interface and is selected with specific #En. It is particularly well suited for use in high reliability, high Performance and high density system applications. It is also targeted for systems demanding a very high reliability over Extreme temperature conditions and environments. TheVDMR10M40XS96XX5V35 module is packaged in a 96 pin SOP.
●Features:
■Fast 35 ns Read/Write Cycle
■SRAM Compatible Timing, Uses Existing SRAM Controllers Without Redesign
■Unlimited Read & Write Endurance
■Data Always Non-volatile for >20-years at Temperature
■One Memory Replaces Flash, SRAM, EEPROM and BBSRAM in System for Simpler, More Efficient Design
■Replace battery-backed SRAM solutions with MRAM to eliminate battery assembly improving reliability
■3.3 Volt Power Supply
■Automatic Data Protection on Power Loss
■Commercial, Industrial, Automotive Temperatures
■Package:SOP96

Myorbita

VDMR10M40XS96XX5V35VDMR10M40XS96XX5V35□VDMR10M40VS96EE8V35VDMR10M40VS96IB8V35VDMR10M40RS96SS8V35

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VDIC MAGNETORESISTIVES RANDOM ACCESS MEMORY

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SOP96

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July 3,2021

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ORBITA/SIP-VDMR10M40XS96XX5V35-USM-01

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