BLC10G18XS-552AVT Power LDMOS transistor

2022-07-05
●General description
■550 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 1805 MHz to 1880 MHz.
●Features and benefits
■Excellent ruggedness
■High efficiency
■Low thermal resistance providing excellent thermal stability
■Lower output capacitance for improved performance in Doherty applications
■Designed for low memory effects providing excellent digital pre-distortion capability
■Internally matched for ease of use
■Integrated ESD protection
■For RoHS compliance see the product details on the Ampleon website

AMPLEON

BLC10G18XS-552AVT

More

Part#

Power LDMOS transistorLDMOS packaged asymmetric Doherty power transistor

More

base station applications ]RF power amplifiers ]multi carrier applications ]

More

Datasheet

More

More

Please see the document for details

More

More

SOT1258-4

English Chinese Chinese and English Japanese

31 October 2019

Rev. 1

BLC10G18XS-552AVT

1.2 MB

- The full preview is over. If you want to read the whole 13 page document,please Sign in/Register -
  • +1 Like
  • Add to Favorites

Recommend

All reproduced articles on this site are for the purpose of conveying more information and clearly indicate the source. If media or individuals who do not want to be reproduced can contact us, which will be deleted.

Contact Us

Email: