MTB095N10KRJ3 N -Channel Enhancement Mode Power MOSFET
■Low Gate Charge
■Simple Drive Requirement
■ESD protected gate
■Pb-free lead plating & Halogen-free package
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Datasheet |
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Please see the document for details |
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TO-252 |
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English Chinese Chinese and English Japanese |
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2021.07.07 |
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C714J3 |
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465 KB |
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