PAP2011ANS Fast Switching MOSFET
■This PAP2011ANS P-Channel enhancement mode power field effect transistor is the high density trench technology and this advanced technology can provide excellent Rds(On) performance and efficiency for power switching and load switching application., this device also comply with the RoHS and Green Product requirement with full function reliability approved
●Feature
■Super high density cell design for extremely low RDS (ON)
■Exceptional on-resistance and maximum DC current capability
■SOT-23S package design
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P-Channel enhancement mode power field effect transistor 、 Fast Switching MOSFET |
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[ Battery Powered System ][ Net Working System ][ Portable Equipment ] |
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Datasheet |
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Please see the document for details |
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SOT-23S |
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English Chinese Chinese and English Japanese |
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2017.Jun |
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Revision:D |
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16007F27 |
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629 KB |
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