APJ4N65D/Y 650V N-SJ Enhancement Mode MOSFET

PublishTime：2022-06-29

■General Description
●APJ4N65D/Y use advanced Super juction MOS technology to provide low R-DS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device offers extremely fast and robust body diode, and is suitable for telecom and power supplies.
■Features
●Low RDS(on) & FOM
●Extremely low switching loss
●Excellent stability and uniformity
●Easy to drive

Brand of Product：	APM-Microelectronics
Part#：	APJ4N65D 、 APJ4N65Y More Part#
Product Category：	N-SJ Enhancement Mode MOSFET More
Application：	[ Lighting ][ Server power supply ][ Telecom ][ Solar inverter ] More
Data Type：	Datasheet More
Safety & Environment Standards：	More
Operating Temperature：	Please see the document for details
Qualification Grade：	More
Qualification Approval：	More
Package：	TO-252-3L;TO-251-3L
Language：	English Chinese Chinese and English Japanese
Date of Creation：	2019/4/12
Version Number：	REV1.0
Data Encoding：
Data Size：	1.5 MB

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