AP5N10MI 100V N-Channel Enhancement Mode MOSFET
●The AP5N10MI uses advanced trench technology to provide excellent R-DS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.
■General Features
●V-DS= 100V, I-D=5A
●R-DS(ON)< 125mΩ@ V-GS=10V
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[ Battery protection ][ Load switch ][ Uninterruptible power supply ] |
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Datasheet |
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Please see the document for details |
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SOT-23-3L |
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English Chinese Chinese and English Japanese |
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2019/4/9 |
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Rev3.8 |
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1.7 MB |
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