PAC2019S N-Ch and P-Ch Fast Switching MOSFET

2022-06-24
●This PAC2019S N&P Channel enhancement mode power field effect transistor is the high density trench technology and this advanced technology can provide excellent Rds(On) performance and efficiency for power switching and load switching application., this device also comply with the RoHS and Green Product requirement with full function reliability approved.
●Features:
■Super high density cell design for extremely low RDS (ON)
■Exceptional on-resistance and maximum DC current capability
■DFN2X2-6L package design

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PAC2019S

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N-Ch and P-Ch Fast Switching MOSFETN&P Channel enhancement mode power field effect transistor

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Power Management in Note book ]Portable Equipment ]Battery Powered System ]DC/DC Converter ]Load Switch ]DSC ]LCD Display inverte ]power switching ]load switching ]

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Datasheet

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DFN2X2-6L

English Chinese Chinese and English Japanese

2017.Jun

Revision:D

16007C28

691 KB

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