1N60, 1N60P SMALL SIGNAL SCHOTTKY DIODES
■Metal-on-silicon junction, majority carrier conduction
■High current capability, Low forward voltage drop
■Extremely low reverse current IR
■Ultra speed switching characteristics
■Small temperature coefficient of forward characteristics
■Satisfactory wave detection efficiency
■For use in recorder, TV ,radio and telephone as detectors
■Super high speed switching cirits, small current rectifier
■High temperature soldering guaranteed: 260°C 10 seconds at terminals
■Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
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Please see the document for details |
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DO-35 |
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English Chinese Chinese and English Japanese |
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2010/12/24 |
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449 KB |
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