MSK3419DF P-Channel MOSFET
■The MSK3419DF uses advanced trench technology and design to provide excellent R-DS(ON) with low gate charge . This device is well suited for high current load applications.
●General Features
■VDS =-30V, ID =-30A
■R-DS(ON) <12mΩ @ V-GS=-10V
■R-DS(ON) <18mΩ @ V-GS=-4.5V
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[ High side switch ][ full bridge converter ][ DC/DC converter ][ LCD display ] |
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Datasheet |
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Please see the document for details |
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DFN3X3-8L |
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English Chinese Chinese and English Japanese |
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2021/10/11 |
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535 KB |
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