MS50N02 MOS tube
■V-DS =20V,I-D =60A
■R-DS(ON) <6mΩ @ V-GS=4.5V
■High density cell design for ultra low Rdson
■Fully characterized avalanche voltage and current
■Good stability and uniformity with high E-AS
■Excellent package for good heat dissipation
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[ Load switching ][ Hard switched ][ high frequency circuits ][ Uninterruptible power supply ] |
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Datasheet |
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Please see the document for details |
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TO-252 |
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English Chinese Chinese and English Japanese |
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2021/10/11 |
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838 KB |
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