JSM130P06B P-Channel Enhancement Mode Power MOSFET

PublishTime：2022-06-13

●Description
■The JSM130P06B uses advanced trench technology and design to provide excellent R-DS(ON) with low gate charge.This device is well suited for high current load applications.
●Features
■Vos =-60V,I-D =-130A
◆R-DS(ON) <13mΩ @ V-Gs=-10V
◆R-DS(ON) <16mΩ @ V-Gs=-4.5V
■High density cell design for ultra low R-DS(ON)
■Fully characterized avalanche voltage and current
■Good stability and uniformity with high E-AS
■Excellent package for good heat dissipation

Brand of Product：	JSMirco-SEMI
Part#：	JSM130P06B More Part#
Product Category：	P-Channel Enhancement Mode Power MOSFET More
Application：	[ Load switch ] More
Data Type：	Datasheet More
Safety & Environment Standards：	More
Operating Temperature：	Please see the document for details
Qualification Grade：	More
Qualification Approval：	More
Package：	TO-263-2L
Language：	English Chinese Chinese and English Japanese
Date of Creation：	2022/1/21
Version Number：
Data Encoding：
Data Size：	1.8 MB

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