MOS Model, level 902
■MOS Model 9 is a compact MOS-transistor model, intended for the simulation of circuit behaviour with emphasis on analogue applications. The model gives a complete description of all transistor-action related quantities: nodal currents and charges, noise-power spectral densities and weak-avalanche currents. The equations describing these quantities are based on the gradual-channel approximation with a number of first-order corrections for small-size effects. The consistency is maintained by using the same carrier-density and electrical-field expressions in the calculation of all model quantities. Model 9 only provides a model for the intrinsic transistor. Junction charges and leakage currents are not included. They are covered by the separate Juncap model. Similarly, interconnect capacitances are deferred to the Intcap or ConnectDPEM model.
|
|
|
|
User's Guide |
|
|
|
|
Please see the document for details |
|
|
|
|
|
|
|
|
|
|
|
English Chinese Chinese and English Japanese |
|
|
December 2009 |
|
|
|
|
|
|
|
|
653 KB |
- +1 Like
- Add to Favorites
Recommend
All reproduced articles on this site are for the purpose of conveying more information and clearly indicate the source. If media or individuals who do not want to be reproduced can contact us, which will be deleted.
Integrated Circuits
Discrete Components
Connectors & Structural Components
Assembly UnitModules & Accessories
Power Supplies & Power Modules
Electronic Materials
Instrumentation & Test Kit
Electrical Tools & Materials
Mechatronics
Processing & Customization
