STG40M120F3D7 Trench gate field-stop 1200 V, 40 A low loss M series IGBT die in D7 packing Datasheet
■ Low VCE(sat) = 1.85 V (typ.) @ IC = 40 A
■ 10 μs of short-circuit withstand time
■ Minimized tail current
■ Tight parameter distribution
■ Positive VCE(sat) temperature coefficient
● Description:
■ This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation.
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[ Industrial motor control ][ Motor drives ][ Power supplies ][ Power converters ][ Solar inverters (string and central) ] |
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Datasheet |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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21-Feb-2022 |
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Rev 3 |
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DS10810 |
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257 KB |
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