50N03 MOSFET
■The 50N03 uses advanced trench technology And design to provide excellent RDS(ON) with Low gate charge. It can be used in a wide Vanety of applications.
●GENERAL FEATURES:
■V-DS = 30V, I-D = 50 A
■R-DS (ON) < 6.5 mΩ@ V-GS = 10V
■High density cell design for ultra low Rdson
■Fully characterized Avalanche voltage and current
■Good stabilty and unifomity with high EAS
■Excellent package for good heat dissipation
■Special process technology for high ESD capability
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[ Power switching application ][ Hard Switched and High Frequency Circuits ][ Uninterruptible Power Supply ] |
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Datasheet |
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Please see the document for details |
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TO-252 |
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English Chinese Chinese and English Japanese |
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2021/10/15 |
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902 KB |
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