AO3400 N-Channel Enhancement Mode Field Effect Transistor

2022-06-08
●General Description:
■The AO3400 uses advanced trench technology to provide excellent R-DS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Standard Product AO3400 is Pb-free (meets ROHS & Sony 259 specifications). AO3400L is a Green Product ordering option. AO3400 and AO3400L are electrically identical.
●Features:
■V-DS (V) = 30V
■I-D = 5.8 A (V-GS = 10V)
■R-DS(ON) < 28mΩ (V-GS = 10V)
■R-DS(ON) < 33mΩ (V-GS = 4.5V)
■R-DS(ON) < 52mΩ (V-GS = 2.5V)

YiXin

AO3400AO3400L

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N-Channel Enhancement Mode Field Effect Transistor

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Datasheet

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2006/4/29

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