Improving thermal performance in semiconductor process chambers: Atomic Layer Deposition Solution Note
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●ALD process overview
▲Chemical reactions are used to grow films one atomic layer at a time. By managing the cycle stages, it is possible to achieve precise control of the quantity and composition of the layers. Uniform coverage is possible on any topology or 3D structure. These chemical reactions are thermally driven, most frequently by heating a substrate, and can be further enhanced during the gas-phase by applying plasma assistance during the deposition process.
▲Self-limiting uniform growth can only be achieved within an ideal temperature range. If outside this, the ALD process could be impaired by one of the detrimental effects shown in the diagram below.
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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September 2021 |
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Issue 1 |
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HA033638;998-21301604_GMA_UK |
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780 KB |
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