W29N02KW/ZxxBF 2G-BIT 1.8V NAND FLASH MEMORY
The memory array totals 285,212,672 bytes, and organized into 2,048 erasable blocks of 139,264 bytes(69,632 words). Each block consists of 64 programmable pages of 2,176-bytes(1,088 words)each. Each page consists of 2,048-bytes(1,024 words)for the main data storage and 128-bytes (64 words) for the spare data area (The spare area is typically used for error management functions).
The W29N02KZ/W supports the standard NAND flash memory interface using the multiplexed 8-bit(16-bit)bus to transfer data, addresses, and command instructions. The five control signals, CLE, ALE, #CE, #RE and #WE handle the bus interface protocol. Also, the device has two other signal pins, the #WP (Write Protect) and the RY/#BY (Ready/Busy) for monitoring the device status.
W29N02KWxxBF 、 W29N02KZxxBF 、 W29N02KZ 、 W29N02KW 、 W29N02KZDIBF 、 W29N02KZSIBF 、 W29N02KWSIBF 、 W29N02KWDIBF 、 W29N02KZBIBF 、 W29N02KWBIBF 、 W29N02KZSJBF 、 W29N02KWSJBF 、 W29N02KZDJBF 、 W29N02KWDJBF 、 W29N02KZBJBF 、 W29N02KWBJBF |
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Datasheet |
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Please see the document for details |
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TSOP1;VFBGA;TSOP-48;VFBGA-48;VFBGA-63 |
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English Chinese Chinese and English Japanese |
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August 20th, 2021 |
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Revision C |
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2.1 MB |
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