Description of the ON Semiconductor MOSFET Model Application Note

PublishTime：2022-05-16

●Structure of MOSFET Model
■Figure 1 shows the structure of ON Semiconductor’s MOSFET Model. The MOSFET model includes the following components:
◆level−1 static MOSFET model M1, nonlinear capacitance between gate and drain FI1 and FI2
◆nonlinear capacitance between drain and source (included in D1)
◆MOSFET body diode D1, internal gate resistance RG
◆parasitic linear capacitance between gate and source(included in M1)
◆parasitic linear capacitance between gate and drain(included in M1)
◆parasitic package resistance of gate, drain, and source, and parasitic body resistance RDS. Parasitic inductance of the package is not included.
■The ON Semiconductor MOSFET model shows excellent correlation with experimental results even though level−1static MOSFET model is utilized. Higher static MOSFET models do not necessarily have higher accuracy if model parameters are not well characterized.

Brand of Product：	ON Semiconductor
Part#：
Product Category：	MOSFET More
Application：	More
Data Type：	Application note & Design Guide More
Safety & Environment Standards：	More
Operating Temperature：	Please see the document for details
Qualification Grade：	More
Qualification Approval：	More
Package：
Language：	English Chinese Chinese and English Japanese
Date of Creation：	November, 2011
Version Number：	Rev. 1
Data Encoding：	AND9033/D
Data Size：	190 KB

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