EPC2100 – Enhancement-Mode GaN Power Transistor Half-Bridge V-DS,30 V R-DS(on),8.2 mΩ (Q1),2.1 mΩ (Q2) I-D,10A (Q1),40A (Q2) DATASHEET

PublishTime：2022-04-26

●EPC2100 eGaN® ICs are supplied only in passivated die form with solder bumps Die Size: 6.05 mm x 2.3 mm
●Applications
■High Frequency DC-DC
■Point-of-Load (POL) Converters
●Benefits
■High Frequency Operation
■Ultra High Efficiency
■High Density Footprint

Brand of Product：	EPC
Part#：	EPC2100 More Part#
Product Category：	Half-Bridge Enhancement-Mode GaN Power Transistor 、 eGaN® FET 、 Transistor More
Application：	[ Point-of-Load (POL) Converters ][ High Frequency DC-DC ] More
Data Type：	Datasheet More
Safety & Environment Standards：	More
Operating Temperature：	Please see the document for details
Qualification Grade：	More
Qualification Approval：	More
Package：
Language：	English Chinese Chinese and English Japanese
Date of Creation：	August 2019
Version Number：
Data Encoding：
Data Size：	423 KB

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