2SJ599 MOS Field Effect Transistor
■Low on-resistance
◆RDS(on)1=75mΩMAX. (VGS=-10 V, ID=-10A)
◆RDS(on)2= 110 mΩMAX. (VGS=-4.0V,ID=-10 A)
■Low Ciss:Ciss= 1300 pF TYP
■Built-in gate protection diode
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Datasheet |
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Please see the document for details |
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TO-252 |
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English Chinese Chinese and English Japanese |
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2020/2/24 |
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50 KB |
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