STGW80H65DFB-4 Trench gate field-stop 650 V, 80 A high speed HB series IGBT Datasheet
■This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which representsan optimum compromise between conduction and switching loss to maximize theefficiency of any frequency converter. A faster switching event can be achieved bythe Kelvin pin, which separates power path from driving signal. Furthermore, theslightly positive VCE(sat) temperature coefficient and very tight parameter distributionresult in safer paralleling operation.
●Features
■VCE(sat) = 1.6 V (typ.) @ IC = 80 A
■Maximum junction temperature: TJ = 175 °C
■High speed switching series
■Minimized tail current
■Tight parameter distribution
■Safe paralleling
■Low thermal resistance
■Very fast soft recovery antiparallel diode
■Excellent switching performance thanks to the extra driving kelvin pin
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Datasheet |
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Please see the document for details |
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TO247-4 |
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English Chinese Chinese and English Japanese |
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03-Dec-2021 |
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Revision 5 |
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DS11137 |
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561 KB |
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