LSIC1MO120E0160 1200V N-Channel, Enhancement-mode SiC MOSFET Datasheet

2022-04-14
●Features
■Optimized for high-frequency, high-efficiency applications
■Extremely low gate charge and output capacitance
■Low gate resistance for high-frequency switching
■Normally-off operation at all temperatures
■Halogen-free, lead-free, and RoHS-compliant

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LSIC1MO120E0160

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Part#

1200V N-Channel, Enhancement-mode SiC MOSFETSilicon Carbide MOSFET

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High-frequency applications ]Solar Inverters ]Switch Mode Power Supplies ]UPS ]Motor Drives ]High Voltage DC/DC Converter ]Battery Chargers ]Induction Heating ]

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Datasheet

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04/05/22

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