STP200N3LL N-channel 30 V, 2.15 mΩ typ., 120 A Power MOSFET in a TO-220 package
■Description
●This device is an N-channel Power MOSFET with very low R-DS(on) in all packages.
■Features
●Very low on-resistance
●Very low gate charge
●High avalanche ruggedness
●Low gate drive power loss
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Datasheet |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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27-Jul-2016 |
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Rev 2 |
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028758 |
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895 KB |
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