10 W, GaN Power Amplifier, 2.7 GHz to 3.8 GHz
●The HMC1114 is a gallium nitride (GaN), broadband power amplifier, delivering 10 W with more than 50% power added efficiency (PA E) across a bandwidth of 2.7 GHz to 3.8 GHz. The HMC1114 provides ±0.5 dB gain flatness.
The HMC1114 is ideal for pulsed or continuous wave (CW) applications such as wireless infrastructure, radar, public mobile radio, and general-purpose amplification.
The HMC1114 is housed in a compact LFCSP_ C AV package
●FEATURES
■High saturated output power (PSAT): 41.5 dBm typical
■High small signal gain: 35 dB typical
■High power gain for saturated output power: 25.5 dB typical
■Bandwidth: 2.7 GHz to 3.8 GHz
■High power added efficiency (PAE): 54% typical
■High output IP3: 44 dBm typical
■Supply voltage: VDD = 28 V at 150 mA
■32-lead, 5 mm × 5 mm LFCSP_CAV package
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GaN Power Amplifier 、 gallium nitride (GaN), broadband power amplifier |
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[ public mobile radios ][ wireless infrastructure ][ Test and measurement equipment ][ Commercial and military radars ][ General-purpose transmitter amplification ] |
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Datasheet |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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3/17 |
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Rev.A |
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D13530-0-3/17(A) |
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572 KB |
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