K1S321611C 2Mx16 bit Uni-Transistor Random Access Memory

2022-03-25
●GENERAL DESCRIPTION
■The K1S321611C is fabricated by SAMSUNG′s advanced CMOS technology using one transistor memory cell. The device supports Industrial temperature range and 48 ball Chip ScalePackage for user flexibility of system design. The device also supports dual chip selection for user interface.
●FEATURES
■Process Technology: CMOS
■Organization: 2M x16 bit
■Power Supply Voltage: 2.7V~3.1V
■Three State Outputs
■Compatible with Low Power SRAM
■Dual Chip selection support
■Package Type: 48-FBGA-6.00x

Samsung Electronics

K1S321611CK1S321611C-IK1S321611C-FI70

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Part#

Uni-Transistor Random Access MemoryUni-Transistor CMOS RAM

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Datasheet

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Please see the document for details

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48-FBGA

English Chinese Chinese and English Japanese

August 13, 2003

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