BL24C02A/04A/08A/16A electrically erasable and programmable read-only memory (EEPROM)
● The device is optimized for use in many industrial and commercial applications where low-power and low-voltage operation are essential.
● Features:
■ Compatible with all I²C bidirectional data transfer protocol
■ Memory array:
◆ 2K bits (256X 8) / 4K bits (512 X8) / 8K bits (1024 X 8) / 16K bits (2048 X 8) of EEPROM
◆ Page size: 16bytes
■ Single supply voltage and high speed:
◆ 1 MHz
◆ Random and sequential Read modes
■ Write:
◆ Byte Write within 3ms
◆ Page Write within 3ms
◆ Partial Page Writes Allowed
■ Write Protect Pinfor Hardware Data Protection
■ Schmitt Trigger, Filtered Inputs for Noise Suppression
■ High-reliability
◆ Endurance: 1 Million Write Cycles
◆ Data Retention: 100 Years
■ Enhanced ESD/Latch-up protection: HBM 8000V
■ TSOT23-5、8-lead PDIP/SOP/TSSOP and UDFN packages
electrically erasable and programmable read-only memory (EEPROM) |
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Datasheet |
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Please see the document for details |
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TSOT23-5;PDIP;SOP;TSSOP;UDFN;DFN |
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English Chinese Chinese and English Japanese |
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2017/8/3 |
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Vision 1.92 |
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972 KB |
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