PT9926 20V N-Channel Enhancement Mode MOSFET
●VDS=20V
●RDS(ON), Vgs@2.5V, Ids@5.2A＜40mΩ
●RDS(ON), Vgs@4.5V, Ids@6A＜30mΩ
■Features:
●Advanced trench process technology
●High Density Cell Design For Ultra Low On-Resistance
●High Power and Current handing capability
●Ideal for Li ion battery pack applications
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Datasheet |
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Please see the document for details |
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SOP-8 |
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English Chinese Chinese and English Japanese |
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2012-7-8 |
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504 KB |
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