New High Power Semiconductor Devices Are Pushing Instrumentation to Extremes TECHNICAL BRIEF
■The power electronics market, driven by new wide bandgap (WBG) semiconductor devices is expected to grow by a 4.3% compounded annual growth rate (CAGR) through 2025 to a level around $22B. Power transistors are expected to be the largest and fastest growing segment of the discrete semiconductor industry, with much of this growth being driven by new energy efficiency-related applications and technologies for electric vehicles (EV), hybrid electric vehicles (HEV), energy storage applications, and even for upcoming Urban Air Mobility (UAM systems).
Many segments of the electronics industry, including the semiconductor industry, are focused on efficiency of energy generation, transmission, and consumption.
■Device manufacturers have traditionally relied on silicon (Si) technology for creating many of the devices used to control motors, regulate voltages, convert power, etc. Given that most power semiconductor devices are used as switches or blocking devices in these applications, this translates into creating devices that offer lower leakage, lower ON resistance, or both.
■Wide-bandgap semiconductors including gallium nitride (GaN) and silicon carbide (SiC) are exceeding the capabilities of Si. Electrically, these substances are closer to insulators than silicon and other typical semiconductor materials.Their adoption is an effort to overcome limitations of silicon that stem from it being a narrow bandgap material, which leads to undesirable conductive leakages that become more pronounced with increases in temperature, voltage, or frequency.
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Application note & Design Guide |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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2021/9/11 |
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1KW-73841-0 |
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2.1 MB |
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