HPU600R280PC-G Silicon N-Channel Power MOSFET Data sheet
●HPU600R280PC-G, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package type is TO-251, which accords with the RoHS standard.
■Features：
●Fast Switching
●Low Gate Charge
●Low Reverse transfer capacitances
●100% Single Pulse avalanche energy Test
●Halogen Free
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Datasheet |
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Please see the document for details |
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TO-251 |
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English Chinese Chinese and English Japanese |
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2020/2/24 |
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v01 |
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520 KB |
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