CS20N60A8R Silicon N-Channel Power MOSFET Data sheet
■General Description：
●CS20N60 A8R the silicon N-channel Enhanced VDMOSFET, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220AB, which accords with the RoHS standard.
■Features：
●Fast Switching
●Low ON Resistance(Rdson≤0.45Ω)
●Low Gate Charge (Typical Data:57nC)
●Low Reverse transfer capacitances(Typical:23pF)
●100% Single Pulse avalanche energy Test
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Datasheet |
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Please see the document for details |
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TO-220AB |
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English Chinese Chinese and English Japanese |
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2020/3/9 |
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V01 |
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354 KB |
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