Design and Optimization of Silicon Carbide Schottky Diode

PublishTime：2022-01-29

●Nowadays, Schottky Diode, MOSFET and JFET are the most popular SiC power devices in the market: especially the SiC Schottky Diode: which already have almost 20 years mature application experience when it was commercialized since the beginning of this century. The earliest SiC Schottky diodes employed a pure Schottky barrier diode (SBD) structure, then it evolved into the structure called Junction Barrier Schottky (JBS) with low reverse leakage current, and the newest structure is called Merged PN Schottky (MPS) exhibiting massively increased surge current handling capability.
●WeEn Semiconductors released 650V SiC MPS Diode based on 100mm SiC wafer in 2014, and 650V SiC MPS Diode based on 150mm High Quality SiC wafer in 2017. Earlier this year, based on the mature 150mm wafer technology, WeEn launched 1200V SiC MPS Diode and AEC-Q101 qualified 650V automotive SiC MPS Diode.
In this article, we will firstly discuss the reason why SiC power devices possess superior performance Jhen share the design process of SiC products. At last, WeEn SiC MPS diode featured ultra-low reverse recovery charge (Qrr) will be introduced.

Brand of Product：	WeEn
Part#：
Product Category：	Silicon Carbide Schottky Diode More
Application：	More
Data Type：	Application note & Design Guide More
Safety & Environment Standards：	More
Operating Temperature：	Please see the document for details
Qualification Grade：	More
Qualification Approval：	More
Package：
Language：	English Chinese Chinese and English Japanese
Date of Creation：	2019/12/15
Version Number：
Data Encoding：
Data Size：	996 KB

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