Silicon Carbide Power Semiconductor Company Introduction
2022-01-27
●SIC SCHOTTKY DIODES - DISCRETES
■SiC Schottky diodes from SemiQ operate with zero switching losses thereby increasing overall efficiency and decreasing heat dissipation. All Gen 3 Schottky Diodes in discrete packages are 100% Avalanche Energy tested.
●SIC SCHOTTKY DIODES - MODULES
■SiC Schottky Diode Modules offer a cost-effective solution with both ruggedness and low stray inductance. These SOT-227 have built in electrical isolation from the base plate.
●SIC MOSFETS - MODULES
■SemiQ provides customized circuit topologies in multiple standardized package platforms. We offer quick sample delivery with low NRE cost, reducing development costs and challenges.
●SIC SCHOTTKY MODULES
■These power modules utilize SemiQ's Gen 3 Silicon Carbide diodes which feature:
▲Merged PiN Schottky (MPS) device structure
▲Enhanced two-layer chip passivation for improved moisture resistance
▲Over 8 million device hours of HTRB and H3TRB
▲Improved surge current and ruggedness
■SiC Schottky diodes from SemiQ operate with zero switching losses thereby increasing overall efficiency and decreasing heat dissipation. All Gen 3 Schottky Diodes in discrete packages are 100% Avalanche Energy tested.
●SIC SCHOTTKY DIODES - MODULES
■SiC Schottky Diode Modules offer a cost-effective solution with both ruggedness and low stray inductance. These SOT-227 have built in electrical isolation from the base plate.
●SIC MOSFETS - MODULES
■SemiQ provides customized circuit topologies in multiple standardized package platforms. We offer quick sample delivery with low NRE cost, reducing development costs and challenges.
●SIC SCHOTTKY MODULES
■These power modules utilize SemiQ's Gen 3 Silicon Carbide diodes which feature:
▲Merged PiN Schottky (MPS) device structure
▲Enhanced two-layer chip passivation for improved moisture resistance
▲Over 8 million device hours of HTRB and H3TRB
▲Improved surge current and ruggedness
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