FFSH50120A Silicon Carbide Schottky Diode
●Description
■Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency， faster operating frequency，increased power density, reduced EMI, and reduced system size & cost.
●Features
■Max Junction Temperature 175°C
■Avalanche Rated 441 mJ
■High Surge Current Capacity
■Positive Temperature Coefficient
■Ease of Paralleling
■No Reverse Recovery/No Forward Recovery
■This Device is Pb-Free, Halogen Free/BFR Free and RoHS Compliant
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[ SMPS ][ Solar Inverter ][ UPS ][ Power Switching Circuits ] |
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Datasheet |
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Please see the document for details |
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TO−247−2LD |
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English Chinese Chinese and English Japanese |
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2019/12/18 |
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Rev. 3 |
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FFSH50120A/D |
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431 KB |
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