30 V, 1 A NPN/NPN low VCEsat (BISS) transistor
●NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PBSS4130PANP. PNP/PNP complement: PBSS5130PAP.
●Features and benefits:
■Very low collector-emitter saturation voltage VCEsat
■High collector current capability IC and ICM
■High collector current gain hFE at high IC
■Reduced Printed-Circuit Board (PCB) requirements
■High energy efficiency due to less heat generation
■AEC-Q101 qualified
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[ Loadswitch ][ Battery-driven devices ][ Power management ][ Charging circuits ][ Power switches ][ motors ][ fans ] |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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11 January 2013 |
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988 KB |
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