W25N512GVxxG/T/R E3V 512M-BIT SERIAL SLC NAND FLASH MEMORY WITH DUAL/QUAD SPI BUFFER READ & CONTINUOUS READ

2021-12-24
■GENERAL DESCRIPTIONS
▲The W25N512GV (512M-bit)Serial SLC NAND Flash Memory provides a storage solution for systems with limited space, pins and power. The W25N QspiNAND family incorporates the popular SPI interface and the traditional large NAND non-volatile memory space. They are ideal for code shadowing to RAM, executing code directly from Dual/Quad SPI (XIP) and storing voice, text and data. The device operate son a single 2.7V to 3.6V power supply with current consumption as low as 25mA active, 10μA for standby and 1μA for deep power down. All W25N QspiNAND family devices are offered in space-saving packages which were impossible to use in the past for the typical NAND flash memory.
▲The W25N512GV 512M-bit memory array is organized into 32,768 programmable pages of 2,048-bytes each. The entire page can be programmed at one time using the data from the 2,048-Byte internal buffer. Pages can be erased in groups of 64(128KB block erase). W25N512GV has 512 erasable blocks.
▲The W25N512GV supports the standard Serial Peripheral Interface (SPI), Dual/Quad I/O SPI: Serial Clock, Chip Select, Serial Data I/O0 (DI), I/O1 (DO), I/O2 (/WP), and I/O3 (/HOLD). SPI clock frequencies of up to 104MHz are supported allowing equivalent clock rates of 208MHz (104MHz x 2) for Dual I/O and 664MHz (166MHz x 4) for Quad I/O when using the Fast Read Dual/Quad I/O instructions.
▲The W25N512GV provides a new Sequential Read Mode that allows for efficient access to the entire memory array with a single Read command. This feature is ideal for code shadowing applications.
▲A Hold pin, Write Protect pin and programmable write protection, provide further control flexibility. Additionally, the device supports JEDEC standard manufacturer and device ID, one 2,048-Byte Unique ID page, one 2,048-Byte parameter page and ten 2,048-Byte OTP pages. To provide better NAND flash memory manageability, user configurable internal ECC, bad block management are also available in W25N512GV.

Winbond Electronics

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3V 512M-BIT SERIAL SLC NAND FLASH MEMORYSerial SLC NAND Flash Memory

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code shadowing applications ]

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Datasheet

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Please see the document for details

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WSON-8;SOIC-16;TFBGA-24

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November 16, 2020

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