Low V-CE(sat) BJT's in Automotive Applications

2021-12-14
●Introduction:
■Low VCE(sat) Bipolar Transistors (BJTs) are an attractive alternative to planar MOSFETs for power switching in automotive management circuits. They are proving to be more ESD robust, consume less power than comparative size planar MOSFETs and often lower cost resulting in a lower system cost. This application note will address the use of Low VCE(sat) BJTs in automotive power management circuits.
■ON Semiconductor’s family of low VCE(sat) Bipolar Junction Transistors (BJT) are surface mount devices featuring ultra low saturation voltage VCE(sat) and high current gain capability in thermally efficient packages. In the automotive industry they are used as a load switch in airbag deployment, pre-drivers for high current Trench MOSFETs in fuel pumps, over voltage protection, low dropout regulation, LED backlight switching, Royer converter for LCD backlights in instrument cluster. The Linear Gain(Beta) of Low VCE(sat) BJT makes them ideal componentsin analog amplifiers and for driving directly from logic circuits.

ON Semiconductor

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Low VCE(sat) Bipolar Transistors (BJTs)

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Automotive Applications ]

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Application note & Design Guide

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SOT−23;WDFN3;SC−74;TSOP−6;SOT−223;SOIC−8;SOT−723;SC−88;DPAK

English Chinese Chinese and English Japanese

December, 2016

Rev. 1

TND6093/D

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