300-1200 V MDmesh The most complete SJ MOSFETs offer for (H)EV power solutions

2021-12-09
With a broad range of breakdown voltages from 300 to 1200 V, ST’s Automotive-grade STPOWER MOSFET portfolio offers more efficient and less expensive power electronics solutions.
Thanks to a very low gate charge and low on-resistance combined with state of the art packaging, ST’s MDmesh technology ensures an enhanced power handling capability, resulting in the ideal choice for all Automotive applications targeting very high efficiency and very impressive power density for super robust power conversion topologies.
■KEY FEATURES & BENEFITS:
●Fast recovery body diode
●Extremely high dV/dt ruggedness
●Low gate charge
●Widest portfolio 300 to 1200 V
●Higher efficiency with lower design complexity
●Especially targeted for Resonant Converter and ZVS topologies
●The only one-stop shop, including very high voltage AEC-Q101 rev. D1 qualified Power MOSFETs
●Wide package portfolio including the new Top side cooling option HU3PAK
■KEY APPLICATIONS:
●On-Board Chargers
●DC to DC Converters
●Battery Management Systems

ST

STB46N30M5STB45N40DM2AGSTD13N50DM2AGSTH47N60DM6-2AGSTHU36N60DM6AGSTHU47N60DM6AGSTW78N65M5ST*30N65DM6AGST*32N65DM6AGSTWA38N65DM6AGSTWA46N65DM6AGSTWA68N65DM6AGSTL7LN65K5AGSTH10N80K5-2AGSTW22N95K5STH13N120K5-2AG

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Part#

SJ MOSFETs

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On-Board Chargers ]DC to DC Converters ]Battery Management Systems ]

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Supplier and Product Introduction

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Please see the document for details

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D2PAK;DPAK;H2PAK-2;HU3PAK;TO-247 LL;H2PAK-7;TO247 LL;PowerFLAT 5x6 VHV;TO-247

English Chinese Chinese and English Japanese

August 2021

FLAECQ1010821

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