PSMN013-40VLD Dual N-channel 40 V, 13 mOhm standard level MOSFET in LFPAK56D (half-bridge configuration)
■Dual, standard level N-channel MOSFET in an LFPAK56D package (halfbridge configuration), using NextpowerS3 technology.
■An internal connection is made between the source (S1) of the high-side FET to the drain (D2) of the low-side FET, making the device ideal to use as a half-bridge switch in high-performance PWM and space constrained motor drive applications
●Features and benefits：
■LFPAK56D package with half-bridge configuration enables:
▲Reduced PCB layout complexity
▲Module shrinkage through reduced component count
▲Improved system level Rth(j-amb) due to optimized package design
▲Lower parasitic inductance to support higher efficiency
▲Footprint compatibility with LFPAK56D Dual package
■NextpowerS3 technology
■Low power losses, high power density
■Superior avalanche performance
■Repetitive avalanche rated
■LFPAK copper clip packaging provides high robustness and reliability
■Gull wing leads support high manufacturability and Automated Optical Inspection (AOI)
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[ Handheld power tools ][ portable appliance ][ space constrained applications ][ Brushless or brushed DC motor drive ][ DC-to-DC systems ][ LED lighting ] |
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Datasheet |
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Please see the document for details |
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LFPAK56D;Dual LFPAK;SOT1205 |
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English Chinese Chinese and English Japanese |
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16 August 2021 |
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296 KB |
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