MOSFETs Silicon N-channel MOS (U-MOS-H) TPN11006PL
●Features
■High-speed switching
■Small gate charge: Q-SW = 5.8 nC (typ.)
■Small output charge: Q-oss = 14.4 nC (typ.)
■Low drain-source on-resistance: R-DS(ON) = 8.8 mΩ (typ.) (V-GS = 10 V)
■Low leakage current: I-DSS = 10 μA (max) (V-DS = 60 V)
■Enhancement mode: V-th = 1.5 to 2.5 V (V-DS = 10 V, I-D = 0.2 mA)
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[ High-Efficiency DC-DC Converters ][ Switching Voltage Regulators ][ Motor Drivers ] |
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Datasheet |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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2016-09-20 |
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Rev.1.0 |
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620 KB |
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